Enviar artigo por via de e-mail Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system
- Autores: Fedorova E.A.1, Bakhteev S.A.2, Maskaeva L.N.1,3, Yusupov R.A.2, Markov V.F.1,3
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Afiliações:
- Ural Federal University
- Kazan National Research Technological University
- Ural Institute of the State Fire Service, EMERCOM
- Edição: Volume 90, Nº 6 (2016)
- Páginas: 1274-1279
- Seção: Colloid Chemistry and Electrochemistry
- URL: https://journals.rcsi.science/0036-0244/article/view/168379
- DOI: https://doi.org/10.1134/S0036024416060078
- ID: 168379
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Resumo
Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.
Sobre autores
E. Fedorova
Ural Federal University
Autor responsável pela correspondência
Email: ka_fed-ra@mail.ru
Rússia, Yekaterinburg, 620002
S. Bakhteev
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
Rússia, Kazan, 420015
L. Maskaeva
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
Rússia, Yekaterinburg, 620002; Yekaterinburg, 620062
R. Yusupov
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
Rússia, Kazan, 420015
V. Markov
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
Rússia, Yekaterinburg, 620002; Yekaterinburg, 620062
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