Application of Heat Treatment to Optimize the Magnetostrictive

E. E. Ivasheva; Ивашева Е. Е.; V. S. Leontiev; Леонтьев В. С.; M. I. Bichurin; Бичурин М. И.; V. V. Koledov; Коледов В. В.

doi:10.31857/S0033849423040034

Application of Heat Treatment to Optimize the Magnetostrictive

Autores: Ivasheva E.¹, Leontiev V.¹, Bichurin M.¹, Koledov V.²
Afiliações:
1. Yaroslav-the-Wise Novgorod State University
2. Kotelnikov Institute of Radioengineering and Electronics of RAS
Edição: Volume 68, Nº 4 (2023)
Páginas: 396-398
Seção: К 90-ЛЕТИЮ ВЛАДИМИРА ГРИГОРЬЕВИЧА ШАВРОВА
URL: https://journals.rcsi.science/0033-8494/article/view/138203
DOI: https://doi.org/10.31857/S0033849423040034
EDN: https://elibrary.ru/PETZWT
ID: 138203

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Resumo

The heat treatment effect of the magnetostrictive component in magnetoelectric (ME) composites consisting of a piezoelectric and magnetostrictive material has been studied. The dependence of the ME voltage coefficient on frequency was experimentally found without heat treatment and with annealing from 200 to 500°C of the AMAG493 amorphous alloy, which acted as a magnetostrictive component. It is shown that with an increase in the processing temperature of an amorphous alloy, an increase in the ME voltage coefficient is observed: the maximum value of the ME coefficient was observed at a temperature of 350°C and amounted to 29.52 V cm–1 Oe–1 at a resonance frequency of 54 kHz. It has been proven that the increase in the ME voltage coefficient occurs due to the improvement in the characteristics of the amorphous alloy during heat treatment, which leads to partial nanocrystallization of the material.

Palavras-chave

magnetoelectric composites, piezoelectric and magnetostrictive materials, voltage coefficient

Bibliografia

Bichurin M.I., Petrov V.M., Petrov R.V., Tatarenko A.S. Magnetoelectric Composites. Singapore: Pan Stanford Publishing Pte. Ltd., 2019.
Nan C.-W., Bichurin M.I., Dong S. et al. // J. Appl. Phys. 2008. V. 103. № 3. P. 031101. https://doi.org/10.1063/1.2836410
Wang Y., Gray D., Berry D. et al. // Adv. Mater. 2011. V. 23. № 35. P. 4111. https://doi.org/10.1002/adma.201100773
Bichurin M., Petrov R., Sokolov O. et al. // Sensors. 2021. V. 21. № 18. P. 6232. https://doi.org/10.3390/s21186232
Wang Y., Li J., Viehland D. // Mater. Today. 2014. V. 17. № 6. P. 269. https://doi.org/10.1016/j.mattod.2014.05.004
Dong S., Liu J.-M., Cheong S.W., Ren Z. // Adv. Phys. 2015. V. 64. № 5–6. P. 519. https://doi.org/10.1080/00018732.2015.1114338
Palneedi H., Annapureddy V., Priya S., Ryu J. // Actuators. 2016. V. 5. № 1. Article No. 5010009. https://doi.org/10.33990/act5010009
Chu Z., Pourhosseiniasl M., Dong S. // J. Phys. D Appl. Phys. 2018. V. 51. № 24. P. 243001. https://doi.org/10.1088/1361-6463/aac29b
Leung C.M., Li J., Viehland D., Zhuang X. // J. Phys. D Appl. Phys. 2018. V. 51. № 26. P. 263002. https://doi.org/10.1088/1361-6463/aac60b
Deng T., Chen Z., Di W. et al. // Smart Mater. Struct. 2021. V. 30. № 8. P. 085005. https://doi.org/10.1088/1361-665X/ac0858
Katakam S., Hwang J.Y., Vora H. et al. // Scripta Mater. 2012. V. 66. № 8. P. 538. https://doi.org/10.1016/j.scriptamat.2011.12.028
Jiang W.H., Atzmon M. // Scripta Mater. 2006. V. 54. № 4. P. 333. https://doi.org/10.1016/j.scriptamat.2005.09.052
Datta A., Nathasingh D., Martis R.J. et al. // J. Appl. Phys. 1984. V. 55. № 6. P. 1784.https://doi.org/10.1063/1.333477