电邮这篇文章 The Validity of the Results of High-Performance Modeling of SiO2 Film Growth
- 作者: Zhupanov V.G.1, Grigoriev F.V.2, Sulimov V.B.2, Tikhonravov A.V.2
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隶属关系:
- Luch Research and Production Association
- Research Computing Center
- 期: 卷 72, 编号 6 (2017)
- 页面: 558-562
- 栏目: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/164878
- DOI: https://doi.org/10.3103/S0027134917060248
- ID: 164878
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详细
This work is devoted to checking of the validity of the results of high-performance modeling of SiO2 film growth. Modeling of the high-energy deposition process shows that the refractive indices of deposited SiO2 films exceed the refractive index of a fused silica substrate. This is entirely supported by the analysis of spectrophotometric data obtained for practical thin films deposited using the respective deposition technique.
作者简介
V. Zhupanov
Luch Research and Production Association
Email: fedor.grigoriev@gmail.com
俄罗斯联邦, Podol’sk, Moscow oblast, 142100
F. Grigoriev
Research Computing Center
编辑信件的主要联系方式.
Email: fedor.grigoriev@gmail.com
俄罗斯联邦, Moscow, 119991
V. Sulimov
Research Computing Center
Email: fedor.grigoriev@gmail.com
俄罗斯联邦, Moscow, 119991
A. Tikhonravov
Research Computing Center
Email: fedor.grigoriev@gmail.com
俄罗斯联邦, Moscow, 119991
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