The Validity of the Results of High-Performance Modeling of SiO2 Film Growth
- Авторы: Zhupanov V.G.1, Grigoriev F.V.2, Sulimov V.B.2, Tikhonravov A.V.2
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Учреждения:
- Luch Research and Production Association
- Research Computing Center
- Выпуск: Том 72, № 6 (2017)
- Страницы: 558-562
- Раздел: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/164878
- DOI: https://doi.org/10.3103/S0027134917060248
- ID: 164878
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Аннотация
This work is devoted to checking of the validity of the results of high-performance modeling of SiO2 film growth. Modeling of the high-energy deposition process shows that the refractive indices of deposited SiO2 films exceed the refractive index of a fused silica substrate. This is entirely supported by the analysis of spectrophotometric data obtained for practical thin films deposited using the respective deposition technique.
Об авторах
V. Zhupanov
Luch Research and Production Association
Email: fedor.grigoriev@gmail.com
Россия, Podol’sk, Moscow oblast, 142100
F. Grigoriev
Research Computing Center
Автор, ответственный за переписку.
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
V. Sulimov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
A. Tikhonravov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Россия, Moscow, 119991
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