Email this article The Validity of the Results of High-Performance Modeling of SiO2 Film Growth
- Authors: Zhupanov V.G.1, Grigoriev F.V.2, Sulimov V.B.2, Tikhonravov A.V.2
-
Affiliations:
- Luch Research and Production Association
- Research Computing Center
- Issue: Vol 72, No 6 (2017)
- Pages: 558-562
- Section: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/164878
- DOI: https://doi.org/10.3103/S0027134917060248
- ID: 164878
Cite item
Open Access
Access granted
Subscription Access
Abstract
This work is devoted to checking of the validity of the results of high-performance modeling of SiO2 film growth. Modeling of the high-energy deposition process shows that the refractive indices of deposited SiO2 films exceed the refractive index of a fused silica substrate. This is entirely supported by the analysis of spectrophotometric data obtained for practical thin films deposited using the respective deposition technique.
About the authors
V. G. Zhupanov
Luch Research and Production Association
Email: fedor.grigoriev@gmail.com
Russian Federation, Podol’sk, Moscow oblast, 142100
F. V. Grigoriev
Research Computing Center
Author for correspondence.
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
V. B. Sulimov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
A. V. Tikhonravov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Russian Federation, Moscow, 119991
Supplementary files
