Enviar artigo por via de e-mail The Validity of the Results of High-Performance Modeling of SiO2 Film Growth
- Autores: Zhupanov V.G.1, Grigoriev F.V.2, Sulimov V.B.2, Tikhonravov A.V.2
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Afiliações:
- Luch Research and Production Association
- Research Computing Center
- Edição: Volume 72, Nº 6 (2017)
- Páginas: 558-562
- Seção: Condensed Matter Physics
- URL: https://journals.rcsi.science/0027-1349/article/view/164878
- DOI: https://doi.org/10.3103/S0027134917060248
- ID: 164878
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Resumo
This work is devoted to checking of the validity of the results of high-performance modeling of SiO2 film growth. Modeling of the high-energy deposition process shows that the refractive indices of deposited SiO2 films exceed the refractive index of a fused silica substrate. This is entirely supported by the analysis of spectrophotometric data obtained for practical thin films deposited using the respective deposition technique.
Sobre autores
V. Zhupanov
Luch Research and Production Association
Email: fedor.grigoriev@gmail.com
Rússia, Podol’sk, Moscow oblast, 142100
F. Grigoriev
Research Computing Center
Autor responsável pela correspondência
Email: fedor.grigoriev@gmail.com
Rússia, Moscow, 119991
V. Sulimov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Rússia, Moscow, 119991
A. Tikhonravov
Research Computing Center
Email: fedor.grigoriev@gmail.com
Rússia, Moscow, 119991
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