The influence of the gas cluster ion beam composition on defect formation in targets

A. E. Ieshkin; A. A. Shemukhin; Yu. A. Ermakov; V. S. Chernysh

doi:10.3103/S0027134916010082

The influence of the gas cluster ion beam composition on defect formation in targets

Авторы: Ieshkin A.E.¹, Shemukhin A.A.², Ermakov Y.A.², Chernysh V.S.¹^,2
Учреждения:
1. Department of Physics
2. Skobeltsyn Institute of Nuclear Physics
Выпуск: Том 71, № 1 (2016)
Страницы: 87-90
Раздел: Radiophysics, Electronics, Acoustics
URL: https://journals.rcsi.science/0027-1349/article/view/164412
DOI: https://doi.org/10.3103/S0027134916010082
ID: 164412

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Defect formation in silicon-on-sapphire films under the action of a gas beam of 30 keV argon cluster ions is studied. Rutherford backscattering in the channeling mode is used to demonstrate the formation of a large number of defects in the volume of a specimen that is irradiated by a cluster ion beam without mass separation. If atomic and light cluster ions are removed from the beam, defect-free etching of the specimen occurs.