The influence of the gas cluster ion beam composition on defect formation in targets

Abstract

Defect formation in silicon-on-sapphire films under the action of a gas beam of 30 keV argon cluster ions is studied. Rutherford backscattering in the channeling mode is used to demonstrate the formation of a large number of defects in the volume of a specimen that is irradiated by a cluster ion beam without mass separation. If atomic and light cluster ions are removed from the beam, defect-free etching of the specimen occurs.