Email this article Dislocation contribution to hysteresis mechanism of internal friction at homological temperatures below 0.2
- Authors: Gorshkov A.A.1, Korovaitseva E.A.2, Lomovskoi V.A.1
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Affiliations:
- Moscow Technological University
- Institute of Mechanics
- Issue: Vol 52, No 2 (2017)
- Pages: 184-194
- Section: Article
- URL: https://journals.rcsi.science/0025-6544/article/view/162919
- DOI: https://doi.org/10.3103/S002565441702008X
- ID: 162919
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Abstract
The computations of the internal friction background arising due to the hysteresis mechanism of dislocation mobility in metallic systems at low temperatures carried out by different model representations are presented. It is shown that the general background of internal friction contains not only the losses due to hysteresis mechanism of oscillatory motions but also the losses due to other mechanisms of the structure defect mobility.
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About the authors
A. A. Gorshkov
Moscow Technological University
Author for correspondence.
Email: ag60341@gmail.com
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
E. A. Korovaitseva
Institute of Mechanics
Email: ag60341@gmail.com
Russian Federation, Michurinskii pr. 1, Moscow, 119192
V. A. Lomovskoi
Moscow Technological University
Email: ag60341@gmail.com
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
