Dislocation contribution to hysteresis mechanism of internal friction at homological temperatures below 0.2
- 作者: Gorshkov A.A.1, Korovaitseva E.A.2, Lomovskoi V.A.1
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隶属关系:
- Moscow Technological University
- Institute of Mechanics
- 期: 卷 52, 编号 2 (2017)
- 页面: 184-194
- 栏目: Article
- URL: https://journals.rcsi.science/0025-6544/article/view/162919
- DOI: https://doi.org/10.3103/S002565441702008X
- ID: 162919
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详细
The computations of the internal friction background arising due to the hysteresis mechanism of dislocation mobility in metallic systems at low temperatures carried out by different model representations are presented. It is shown that the general background of internal friction contains not only the losses due to hysteresis mechanism of oscillatory motions but also the losses due to other mechanisms of the structure defect mobility.
作者简介
A. Gorshkov
Moscow Technological University
编辑信件的主要联系方式.
Email: ag60341@gmail.com
俄罗斯联邦, pr. Vernadskogo 78, Moscow, 119454
E. Korovaitseva
Institute of Mechanics
Email: ag60341@gmail.com
俄罗斯联邦, Michurinskii pr. 1, Moscow, 119192
V. Lomovskoi
Moscow Technological University
Email: ag60341@gmail.com
俄罗斯联邦, pr. Vernadskogo 78, Moscow, 119454
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