A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (AlxGa1 – x)2O3 Thin Films
- Autores: Mochalov L.1, Kudryashov M.1, Prokhorov I.1, Vshivtsev M.1, Kudryashova Y.1, Knyazev A.1
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Afiliações:
- Lobachevsky University of Nizhny Novgorod
- Edição: Volume 57, Nº 5 (2023)
- Páginas: 390-395
- Seção: ПЛАЗМОХИМИЯ
- URL: https://journals.rcsi.science/0023-1193/article/view/140008
- DOI: https://doi.org/10.31857/S0023119323050066
- EDN: https://elibrary.ru/LPUENY
- ID: 140008
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Resumo
A process for fabricating Al-doped β-Ga2O3 thin films of the (AlxGa1−x)2O3 composition by plasma-enhanced chemical vapor deposition has been studied for the first time. High-purity gallium metal, aluminum iodide (AlI3), and high-purity oxygen were used as precursors. Low-temperature plasma at a reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. The plasmaenhanced deposition process was studied by optical emission spectroscopy in the range of 180–1100 nm. The obtained thin films of the (AlxGa1−x)2O3 system with the amount of the Al2O3 phase up to 20% were studied by various analytical methods.
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Sobre autores
L. Mochalov
Lobachevsky University of Nizhny Novgorod
Email: mvshivtcev@mail.ru
Nizhny Novgorod, 603950 Russia
M. Kudryashov
Lobachevsky University of Nizhny Novgorod
Email: mvshivtcev@mail.ru
Nizhny Novgorod, 603950 Russia
I. Prokhorov
Lobachevsky University of Nizhny Novgorod
Email: mvshivtcev@mail.ru
Nizhny Novgorod, 603950 Russia
M. Vshivtsev
Lobachevsky University of Nizhny Novgorod
Email: mvshivtcev@mail.ru
Nizhny Novgorod, 603950 Russia
Yu. Kudryashova
Lobachevsky University of Nizhny Novgorod
Email: mvshivtcev@mail.ru
Nizhny Novgorod, 603950 Russia
A. Knyazev
Lobachevsky University of Nizhny Novgorod
Autor responsável pela correspondência
Email: mvshivtcev@mail.ru
Nizhny Novgorod, 603950 Russia
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