A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (AlxGa1 – x)2O3 Thin Films

L. A. Mochalov; Мочалов Л. А.; M. A. Kudryashov; Кудряшов М. А.; I. O. Prokhorov; Прохоров И. О.; M. A. Vshivtsev; Вшивцев М. А.; Yu. P. Kudryashova; Кудряшова Ю. П.; A. V.  Knyazev; Князев А. В.

doi:10.31857/S0023119323050066

A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (AlxGa1 – x)2O3 Thin Films

Авторлар: Mochalov L.A.¹, Kudryashov M.A.¹, Prokhorov I.O.¹, Vshivtsev M.A.¹, Kudryashova Y.P.¹, Knyazev A.V.¹
Мекемелер:
1. Lobachevsky University of Nizhny Novgorod
Шығарылым: Том 57, № 5 (2023)
Беттер: 390-395
Бөлім: PLASMA CHEMISTRY
URL: https://journals.rcsi.science/0023-1193/article/view/140008
DOI: https://doi.org/10.31857/S0023119323050066
EDN: https://elibrary.ru/LPUENY
ID: 140008

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Аннотация

A process for fabricating Al-doped β-Ga2O3 thin films of the (AlxGa1−x)2O3 composition by plasma-enhanced chemical vapor deposition has been studied for the first time. High-purity gallium metal, aluminum iodide (AlI3), and high-purity oxygen were used as precursors. Low-temperature plasma at a reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. The plasmaenhanced deposition process was studied by optical emission spectroscopy in the range of 180–1100 nm. The obtained thin films of the (AlxGa1−x)2O3 system with the amount of the Al2O3 phase up to 20% were studied by various analytical methods.

Негізгі сөздер

thin films, gallium oxide, aluminum oxide

Әдебиет тізімі

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