Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates

M. A. Kudryashov; Кудряшов М. А.; L. A. Mochalov; Мочалов Л. А.; I. O. Prokhorov; Прохоров И. О.; M. A. Vshivtsev; Вшивцев М. А.; Yu. P. Kudryashova; Кудряшова Ю. П.; V. M. Malyshev; Малышев В. М.; E. A. Slapovskaya; Слаповская Е. А.

doi:10.31857/S0023119323060098

Plasma-Enhanced Chemical Vapor Deposition of Thin GaS Films on Various Types of Substrates

Authors: Kudryashov M.A.¹^,2, Mochalov L.A.¹^,2, Prokhorov I.O.¹^,2, Vshivtsev M.A.¹, Kudryashova Y.P.², Malyshev V.M.¹, Slapovskaya E.A.²
Affiliations:
1. Nizhny Novgorod State Technical University
2. Lobachevsky State University of Nizhny Novgorod
Issue: Vol 57, No 6 (2023)
Pages: 495-499
Section: PLASMA CHEMISTRY
URL: https://journals.rcsi.science/0023-1193/article/view/232824
DOI: https://doi.org/10.31857/S0023119323060098
EDN: https://elibrary.ru/RULDFW
ID: 232824

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Abstract
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Abstract

Gallium monosulfide (GaS), a representative of Group III monochalcogenide layered materials, is a wide-bandgap semiconductor. It is considered an ideal material for light detectors in the blue and near ultraviolet ranges of the spectrum. In this work, for the first time, the method of plasma-enhanced chemical vapor deposition (PECVD) was applied to obtain thin GaS films on various substrates, where high-purity gallium and sulfur served as starting materials. To initiate the interaction between the reactants, a nonequilibrium RF discharge (40.68 MHz) plasma at a pressure of 0.1 torr was used. The influence of the substrate nature on the stoichiometry, structure, and surface morphology of GaS films has been studied. The plasmachemical process was monitored using optical emission spectroscopy.

Keywords

thin films, gallium monosulfide, PECVD

References

Wang Q.H., Kalantar-Zadeh K., Kis A., Coleman J.N., Strano M.S. // Nat. Nanotechnol. 2012. V. 7. № 11. P. 699.
Jung C.S., Shojaei F., Park K., Oh J. Y., Im H.S., Jang D.M., Kang H.S. // ACS Nano. 2015. V. 9. № 10. P. 9585.
Haishuang L., Yu C., Kexin Y., Yawei K., Zhongguo L., Yushen L. // Front. Mater. 2021. V. 8. P. 478.
Cuculescu E., Evtodiev I., Caraman M., Rusu M. // J. Optoelectron. Adv. Mater. 2006. V. 8. № 3. P. 1077.
Okamoto N., Tanaka H. // Mater. Sci. Semicond. Process. 1999. V. 2. P. 13.
Jastrzebski C., Olkowska K., Jastrzebski D.J., Wierzbicki M., Gebicki W., Podsiadlo S. // J. Phys. Condens. Matter. 2018. V. 31. P. 075303.
Hu P., Wang L., Yoon M., Zhang J., Feng W., Wang X., Xiao K. // Nano Lett. 2013. V. 13. № 4. P. 1649.
Gutiérrez Y., Juan D., Dicorato S., Santos G., Duwe M., Thiesen P.H., Giangregorio M.M., Palumbo F., Hingerl K., Cobet C., García-Fernández P., Junquera J., Moreno F., Losurdo M. // Opt. Express. 2022. V. 30. № 15. P. 27609.
Lieth R.M.A., Van Der Maesen F. // Phys. status solidi A. 1972. V. 10. № 1. P. 73.
Kipperman A.H.M., Vermij C.J. // Nuovo cimento B. 1969. V. 63. P. 29.
Wang X., Sheng Y., Chang R.J., Lee J.K., Zhou Y., Li S., Warner J.H. // ACS Omega. 2018. V. 3. № 7. P. 7897.
Sanz C., Guillén C., Gutiérrez M.T. // J. Phys. D. 2009. V. 42. P. 085108.
Chen X., Hou X., Cao X., Ding X., Chen L., Zhao G., Wang X. // J. Cryst. Growth. 1997. V. 173. № 1. P. 51.
Okamoto N., Tanaka H., Hara N. // Jpn. J. Appl. Phys. 2001. V. 40. № 2. P. 104.
Mochalov L., Logunov A., Prokhorov I., Vshivtsev M., Kudryashov M., Kudryashova Y., Malyshev V., Spivak Y., Greshnyakov E., Knyazev A., Fukina D., Yunin P., Moshnikov V. // Opt. Quantum Electron. 2022. V. 54. P. 646.
Shirai T., Reader J., Kramida A.E., Sugar J. // J. Phys. Chem. Ref. Data. 2007. V. 36. № 2. P. 509.