Optimization of Parameters of Graphene Synthesis on Copper Foil at Low Methan Pressure


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Graphene films on copper foils were synthesized using low-pressure (2200-2800 Pa) chemical vapor deposition (CVD) from methane/hydrogen mixtures. The number of graphene layers is shown to be dependent on the composition of gas mixture and synthesis parameters. The annealing procedure of copper foils used as substrates was optimized to obtain high quality graphene. Atomic and electronic structures of graphene on copper and SiO2/Si substrates were studied by Raman, X-ray photoelectron, and near-edge X-ray absorption fine structure spectroscopy methods.

Sobre autores

V. Arkhipov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Autor responsável pela correspondência
Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk

A. Gusel′nikov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk

K. Popov

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk

P. Gevko

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk

Yu. Fedoseeva

Nikolaev Institute of Inorganic Chemistry, Siberian Branch; Novosibirsk State University

Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk; Novosibirsk

D. Smirnov

Institute of Solid State Physics

Email: slavaarhipov@ngs.ru
Alemanha, Dresden

L. Bulusheva

Nikolaev Institute of Inorganic Chemistry, Siberian Branch; Novosibirsk State University

Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk; Novosibirsk

A. Okotrub

Nikolaev Institute of Inorganic Chemistry, Siberian Branch; Novosibirsk State University

Email: slavaarhipov@ngs.ru
Rússia, Novosibirsk; Novosibirsk

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