Optimization of Parameters of Graphene Synthesis on Copper Foil at Low Methan Pressure

Abstract

Graphene films on copper foils were synthesized using low-pressure (2200-2800 Pa) chemical vapor deposition (CVD) from methane/hydrogen mixtures. The number of graphene layers is shown to be dependent on the composition of gas mixture and synthesis parameters. The annealing procedure of copper foils used as substrates was optimized to obtain high quality graphene. Atomic and electronic structures of graphene on copper and SiO₂/Si substrates were studied by Raman, X-ray photoelectron, and near-edge X-ray absorption fine structure spectroscopy methods.