Anomalous Hall effect in polycrystalline Mn  x  Si 1– x   ( x  ≈ 0.5) films with the self-organized distribution of crystallites over their shapes and sizes

K. Yu. Chernoglazov; O. Drachenko; A. S. Bugaev; A. S. Vedeneev; O. A. Novodvorskii; A. B. Granovskii; Yu. A. Matveev; E. M. Pashaev; Yu. M. Chesnokov; A. L. Vasil’ev; V. V. Tugushev; A. V. Zenkevich; A. S. Semisalova; V. V. Rylkov; S. N. Nikolaev; S. Zhou

doi:10.1134/S0021364016070055

Anomalous Hall effect in polycrystalline Mn_xSi_1–x (x ≈ 0.5) films with the self-organized distribution of crystallites over their shapes and sizes

Авторлар: Chernoglazov K.Y.¹, Drachenko O.², Bugaev A.S.³^,4, Vedeneev A.S.⁴, Novodvorskii O.A.⁵, Granovskii A.B.⁶, Matveev Y.A.³, Pashaev E.M.¹, Chesnokov Y.M.¹, Vasil’ev A.L.¹, Tugushev V.V.¹, Zenkevich A.V.³, Semisalova A.S.⁶^,7, Rylkov V.V.¹^,4, Nikolaev S.N.¹, Zhou S.⁷
Мекемелер:
1. National Research Centre Kurchatov Institute
2. Laboratoire National des Champs Magnétiques Intenses
3. Moscow Institute of Physics and Technology
4. Kotel’nikov Institute of Radio Engineering and Electronics
5. Institute on Laser and Information Technologies
6. Lomonosov Moscow State University
7. Institute of Ion Beam Physics and Materials Research
Шығарылым: Том 103, № 7 (2016)
Беттер: 476-483
Бөлім: Condensed Matter
URL: https://journals.rcsi.science/0021-3640/article/view/159216
DOI: https://doi.org/10.1134/S0021364016070055
ID: 159216

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The structural, transport, and magnetic characteristics of polycrystalline Mn_xSi_1–x (x ≈ 0.51–0.52) films grown by pulsed laser deposition onto Al₂O₃(0001) substrates when the low-energy components are deposited owing to collisions with the atoms of the buffer gas have been studied in the “shadow” geometry. The magnetization of these films is determined by two ferromagnetic phases—the high-temperature phase with the Curie temperature T_C ≈ 370 K and the low-temperature one with T_C ≈ 46 K. The anomalous Hall effect changes sign from positive to negative with a decrease in temperature. The sign change occurs in the temperature range of 30–50 K; the specific value of this temperature depends on the thickness of the Mn_xSi_1–x film. The results can be interpreted in terms of the structural self-organization related to the formation of two layers in the course of film growth. These layers have nearly the same chemical composition but significantly differ in the shapes and sizes of crystallites. This leads to a drastic difference in the values of T_C and in the value and the sign of the anomalous Hall effect for such layers.

Қосымша файлдар

Әрекет

1. JATS XML

Жүктеу

Пайдаланушының аты
Құпиясөз
Мені есте сақтау

Құпия сөзді ұмыттыңыз ба?	Тіркеу

Пайдаланушының аты
Құпиясөз
Мені есте сақтау

Құпия сөзді ұмыттыңыз ба?	Тіркеу

Anomalous Hall effect in polycrystalline Mn_xSi_1–x (x ≈ 0.5) films with the self-organized distribution of crystallites over their shapes and sizes

Толық мәтін

Аннотация

Авторлар туралы

K. Chernoglazov

O. Drachenko

A. Bugaev

A. Vedeneev

O. Novodvorskii

A. Granovskii

Yu. Matveev

E. Pashaev

Yu. Chesnokov

A. Vasil’ev

V. Tugushev

A. Zenkevich

A. Semisalova

V. Rylkov

S. Nikolaev

S. Zhou

Қосымша файлдар

Anomalous Hall effect in polycrystalline MnxSi1–x (x ≈ 0.5) films with the self-organized distribution of crystallites over their shapes and sizes

Толық мәтін

Аннотация

Авторлар туралы

Қосымша файлдар

Anomalous Hall effect in polycrystalline Mn_xSi_1–x (x ≈ 0.5) films with the self-organized distribution of crystallites over their shapes and sizes