Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current–voltage characteristics at a certain threshold voltage. It has been found that this threshold voltage changes considerably under the variation of the cavity parameters. The shift of the threshold has been explained by the excitation of high-amplitude oscillations in the cavity.

作者简介

I. Altukhov

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
俄罗斯联邦, Moscow, 125009

A. Usikova

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
俄罗斯联邦, St. Petersburg, 194021

N. Il’inskaya

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
俄罗斯联邦, St. Petersburg, 194021

Yu. Zadiranov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
俄罗斯联邦, St. Petersburg, 194021

A. Vasil’ev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
俄罗斯联邦, St. Petersburg, 194021

A. Buravlev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
俄罗斯联邦, St. Petersburg, 194021

N. Khval’kovskii

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
俄罗斯联邦, Moscow, 125009

S. Paprotskiy

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
俄罗斯联邦, Moscow, 125009

M. Kagan

Kotelnikov Institute of Radio Engineering and Electronics

编辑信件的主要联系方式.
Email: kagan@cplire.ru
俄罗斯联邦, Moscow, 125009

S. Dizhur

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
俄罗斯联邦, Moscow, 125009

V. Ustinov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
俄罗斯联邦, St. Petersburg, 194021

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Inc., 2016