Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices


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Abstract

The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current–voltage characteristics at a certain threshold voltage. It has been found that this threshold voltage changes considerably under the variation of the cavity parameters. The shift of the threshold has been explained by the excitation of high-amplitude oscillations in the cavity.

About the authors

I. V. Altukhov

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Russian Federation, Moscow, 125009

A. A. Usikova

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Russian Federation, St. Petersburg, 194021

N. D. Il’inskaya

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Russian Federation, St. Petersburg, 194021

Yu. M. Zadiranov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Russian Federation, St. Petersburg, 194021

A. P. Vasil’ev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Russian Federation, St. Petersburg, 194021

A. D. Buravlev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Russian Federation, St. Petersburg, 194021

N. A. Khval’kovskii

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Russian Federation, Moscow, 125009

S. K. Paprotskiy

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Russian Federation, Moscow, 125009

M. S. Kagan

Kotelnikov Institute of Radio Engineering and Electronics

Author for correspondence.
Email: kagan@cplire.ru
Russian Federation, Moscow, 125009

S. E. Dizhur

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Russian Federation, Moscow, 125009

V. M. Ustinov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Russian Federation, St. Petersburg, 194021

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