Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current–voltage characteristics at a certain threshold voltage. It has been found that this threshold voltage changes considerably under the variation of the cavity parameters. The shift of the threshold has been explained by the excitation of high-amplitude oscillations in the cavity.

Авторлар туралы

I. Altukhov

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Ресей, Moscow, 125009

A. Usikova

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Ресей, St. Petersburg, 194021

N. Il’inskaya

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Ресей, St. Petersburg, 194021

Yu. Zadiranov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Ресей, St. Petersburg, 194021

A. Vasil’ev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Ресей, St. Petersburg, 194021

A. Buravlev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Ресей, St. Petersburg, 194021

N. Khval’kovskii

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Ресей, Moscow, 125009

S. Paprotskiy

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Ресей, Moscow, 125009

M. Kagan

Kotelnikov Institute of Radio Engineering and Electronics

Хат алмасуға жауапты Автор.
Email: kagan@cplire.ru
Ресей, Moscow, 125009

S. Dizhur

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Ресей, Moscow, 125009

V. Ustinov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Ресей, St. Petersburg, 194021

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