Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices


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Resumo

The miniband conductivity in short-period GaAs/AlAs superlattices with a terahertz cavity has been studied. A stepwise decrease in the current caused by the formation of the electrical domains has been observed in current–voltage characteristics at a certain threshold voltage. It has been found that this threshold voltage changes considerably under the variation of the cavity parameters. The shift of the threshold has been explained by the excitation of high-amplitude oscillations in the cavity.

Sobre autores

I. Altukhov

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Rússia, Moscow, 125009

A. Usikova

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Rússia, St. Petersburg, 194021

N. Il’inskaya

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Rússia, St. Petersburg, 194021

Yu. Zadiranov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Rússia, St. Petersburg, 194021

A. Vasil’ev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Rússia, St. Petersburg, 194021

A. Buravlev

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Rússia, St. Petersburg, 194021

N. Khval’kovskii

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Rússia, Moscow, 125009

S. Paprotskiy

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Rússia, Moscow, 125009

M. Kagan

Kotelnikov Institute of Radio Engineering and Electronics

Autor responsável pela correspondência
Email: kagan@cplire.ru
Rússia, Moscow, 125009

S. Dizhur

Kotelnikov Institute of Radio Engineering and Electronics

Email: kagan@cplire.ru
Rússia, Moscow, 125009

V. Ustinov

Ioffe Physical Technical Institute

Email: kagan@cplire.ru
Rússia, St. Petersburg, 194021

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