Mechanism of AC charge transport in TlSb1–xGaxS2 (x = 0 and 0.03)
- 作者: Asadov S.M.1, Mustafaeva S.N.2
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隶属关系:
- Nagiyev Institute of Catalysis and Inorganic Chemistry
- Institute of Physics
- 期: 卷 53, 编号 12 (2017)
- 页面: 1228-1232
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158331
- DOI: https://doi.org/10.1134/S0020168517120020
- ID: 158331
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详细
The dielectric properties and ac electrical conductivity of TlSb1–xGaxS2 (x = 0, 0.03) single-crystals have been measured in the frequency range 5 × 104 to 3.5 × 107 Hz. Experimental data on the frequency dispersion of the dielectric coefficients and electrical conductivity of the TlSb1–xGaxS2 (x = 0, 0.03) single crystals have allowed us to identify the nature of the dielectric loss and the mechanism of charge transport and evaluate parameters of localized states in the band gap. The incorporation of gallium atoms into the crystal lattice of TlSbS2 crystals has been shown to lead to an increase in the Fermi-level density of states and mean hop time and distance.
作者简介
S. Asadov
Nagiyev Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
阿塞拜疆, pr. Javida 113, Baku, AZ1143
S. Mustafaeva
Institute of Physics
编辑信件的主要联系方式.
Email: solmust@gmail.com
阿塞拜疆, pr. Javida 131, Baku, AZ1143
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