Mechanism of AC charge transport in TlSb1–xGaxS2 (x = 0 and 0.03)

Abstract

The dielectric properties and ac electrical conductivity of TlSb_1–xGa_xS₂ (x = 0, 0.03) single-crystals have been measured in the frequency range 5 × 10⁴ to 3.5 × 10⁷ Hz. Experimental data on the frequency dispersion of the dielectric coefficients and electrical conductivity of the TlSb_1–xGa_xS₂ (x = 0, 0.03) single crystals have allowed us to identify the nature of the dielectric loss and the mechanism of charge transport and evaluate parameters of localized states in the band gap. The incorporation of gallium atoms into the crystal lattice of TlSbS₂ crystals has been shown to lead to an increase in the Fermi-level density of states and mean hop time and distance.