Kinetics and mechanism of the isothermal bulk crystallization of As2Se3Snx (x ≤ 0.55) glasses

Аннотация

The kinetics and mechanism of stepwise transformations underlying the isothermal bulk crystallization of As₂Se₃Sn_x (x = 0.26, 0.40, 0.55) semiconductor glasses in the temperature range 210–310°C have been studied using ¹¹⁹Sn Mössbauer spectroscopy, X-ray diffraction, density and electrical conductivity measurements, and microhardness tests. The results demonstrate that small particles of the primary phase SnSe initiate heterogeneous nucleation and two-dimensional growth of crystals of the secondary, major phase As₂Se₃.