Kinetics and mechanism of the isothermal bulk crystallization of As2Se3Snx (x ≤ 0.55) glasses
- Authors: Shkol’nikov E.V.1
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Affiliations:
- Kirov State Forest Engineering University
- Issue: Vol 53, No 11 (2017)
- Pages: 1195-1200
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158327
- DOI: https://doi.org/10.1134/S0020168517110115
- ID: 158327
Cite item
Abstract
The kinetics and mechanism of stepwise transformations underlying the isothermal bulk crystallization of As2Se3Snx (x = 0.26, 0.40, 0.55) semiconductor glasses in the temperature range 210–310°C have been studied using 119Sn Mössbauer spectroscopy, X-ray diffraction, density and electrical conductivity measurements, and microhardness tests. The results demonstrate that small particles of the primary phase SnSe initiate heterogeneous nucleation and two-dimensional growth of crystals of the secondary, major phase As2Se3.
About the authors
E. V. Shkol’nikov
Kirov State Forest Engineering University
Author for correspondence.
Email: eshkolnikov@yandex.ru
Russian Federation, Institutskii per. 5, St. Petersburg, 194021
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