Kinetics and mechanism of the isothermal bulk crystallization of As2Se3Snx (x ≤ 0.55) glasses


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Abstract

The kinetics and mechanism of stepwise transformations underlying the isothermal bulk crystallization of As2Se3Snx (x = 0.26, 0.40, 0.55) semiconductor glasses in the temperature range 210–310°C have been studied using 119Sn Mössbauer spectroscopy, X-ray diffraction, density and electrical conductivity measurements, and microhardness tests. The results demonstrate that small particles of the primary phase SnSe initiate heterogeneous nucleation and two-dimensional growth of crystals of the secondary, major phase As2Se3.

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E. V. Shkol’nikov

Kirov State Forest Engineering University

Author for correspondence.
Email: eshkolnikov@yandex.ru
Russian Federation, Institutskii per. 5, St. Petersburg, 194021

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