Evolution of the Structure and Properties of AK10M2N Silumin under Irradiation with a High-Intensity Pulsed Electron Beam
- Авторлар: Gromov V.E.1, Ivanov I.F.2, Zagulyaev D.V.1, Petrikova E.A.2, Konovalov S.V.3, Teresov A.D.2, Rygina M.E.2
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Мекемелер:
- Siberian State Industrial University
- Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
- Korolev National Research University
- Шығарылым: Том 54, № 12 (2018)
- Беттер: 1308-1314
- Бөлім: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158582
- DOI: https://doi.org/10.1134/S0020168518120063
- ID: 158582
Дәйексөз келтіру
Аннотация
The structure of cast AK10M2N silumin has been studied by scanning electron microscopy. The results demonstrate that the silumin is a multiphase material containing silicon and intermetallic inclusions. Irradiation of silumin with a high-intensity electron beam has been shown to be accompanied by melting of the surface layer, dissolution of the silicon and intermetallic inclusions, formation of a cellular crystallization structure, and secondary precipitation of submicron- and nanometer-sized second-phase particles. Dispersion of the structure of the surface layer is accompanied by an improvement of the mechanical properties of the silumin.
Негізгі сөздер
Авторлар туралы
V. Gromov
Siberian State Industrial University
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, ul. Kirova 42, Novokuznetsk, Kemerovo oblast, 654007
I. Ivanov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, Akademicheskii pr. 2/3, Tomsk, 634055
D. Zagulyaev
Siberian State Industrial University
Хат алмасуға жауапты Автор.
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, ul. Kirova 42, Novokuznetsk, Kemerovo oblast, 654007
E. Petrikova
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, Akademicheskii pr. 2/3, Tomsk, 634055
S. Konovalov
Korolev National Research University
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, Moskovskoe sh. 34, Samara, 443086
A. Teresov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, Akademicheskii pr. 2/3, Tomsk, 634055
M. Rygina
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Ресей, Akademicheskii pr. 2/3, Tomsk, 634055
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