Evolution of the Structure and Properties of AK10M2N Silumin under Irradiation with a High-Intensity Pulsed Electron Beam
- Autores: Gromov V.E.1, Ivanov I.F.2, Zagulyaev D.V.1, Petrikova E.A.2, Konovalov S.V.3, Teresov A.D.2, Rygina M.E.2
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Afiliações:
- Siberian State Industrial University
- Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
- Korolev National Research University
- Edição: Volume 54, Nº 12 (2018)
- Páginas: 1308-1314
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158582
- DOI: https://doi.org/10.1134/S0020168518120063
- ID: 158582
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Resumo
The structure of cast AK10M2N silumin has been studied by scanning electron microscopy. The results demonstrate that the silumin is a multiphase material containing silicon and intermetallic inclusions. Irradiation of silumin with a high-intensity electron beam has been shown to be accompanied by melting of the surface layer, dissolution of the silicon and intermetallic inclusions, formation of a cellular crystallization structure, and secondary precipitation of submicron- and nanometer-sized second-phase particles. Dispersion of the structure of the surface layer is accompanied by an improvement of the mechanical properties of the silumin.
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Sobre autores
V. Gromov
Siberian State Industrial University
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, ul. Kirova 42, Novokuznetsk, Kemerovo oblast, 654007
I. Ivanov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, Akademicheskii pr. 2/3, Tomsk, 634055
D. Zagulyaev
Siberian State Industrial University
Autor responsável pela correspondência
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, ul. Kirova 42, Novokuznetsk, Kemerovo oblast, 654007
E. Petrikova
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, Akademicheskii pr. 2/3, Tomsk, 634055
S. Konovalov
Korolev National Research University
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, Moskovskoe sh. 34, Samara, 443086
A. Teresov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, Akademicheskii pr. 2/3, Tomsk, 634055
M. Rygina
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: zagulyaev_dv@physics.sibsiu.ru
Rússia, Akademicheskii pr. 2/3, Tomsk, 634055
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