Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

M. A. Ladugin; A. Yu. Andreev; I. V. Yarotskaya; Yu. L. Ryaboshtan; T. A. Bagaev; A. A. Padalitsa; A. A. Marmalyuk; M. G. Vasil’ev

doi:10.1134/S0020168519040095

Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

Authors: Ladugin M.A.¹, Andreev A.Y.¹, Yarotskaya I.V.¹, Ryaboshtan Y.L.¹, Bagaev T.A.¹, Padalitsa A.A.¹, Marmalyuk A.A.¹^,2, Vasil’ev M.G.³
Affiliations:
1. Sigm Plus Co.
2. National Nuclear Research University MEPhI (Moscow Engineering Physics Institute)
3. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Issue: Vol 55, No 4 (2019)
Pages: 315-319
Section: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158666
DOI: https://doi.org/10.1134/S0020168519040095
ID: 158666

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Abstract

This paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase epitaxy. The photoluminescence signal of the GaAs/GaInP QWs is shown to have a higher intensity (by a factor of 50–100) and, at the same time, a larger width (by a factor of ~2.5) in comparison with the GaAs/AlGaAs QWs. We analyze different approaches to controlling emission spectra of these QWs.

Keywords

photoluminescence, quantum wells, emission spectra

About the authors

M. A. Ladugin

Sigm Plus Co.

Author for correspondence.
Email: M.Ladugin@siplus.ru
Russian Federation, ul. Vvedenskogo 3, Moscow, 117342