Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

M. A. Ladugin; A. Yu. Andreev; I. V. Yarotskaya; Yu. L. Ryaboshtan; T. A. Bagaev; A. A. Padalitsa; A. A. Marmalyuk; M. G. Vasil’ev

doi:10.1134/S0020168519040095

Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy

Autores: Ladugin M.A.¹, Andreev A.Y.¹, Yarotskaya I.V.¹, Ryaboshtan Y.L.¹, Bagaev T.A.¹, Padalitsa A.A.¹, Marmalyuk A.A.¹^,2, Vasil’ev M.G.³
Afiliações:
1. Sigm Plus Co.
2. National Nuclear Research University MEPhI (Moscow Engineering Physics Institute)
3. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Edição: Volume 55, Nº 4 (2019)
Páginas: 315-319
Seção: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158666
DOI: https://doi.org/10.1134/S0020168519040095
ID: 158666

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Resumo

This paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase epitaxy. The photoluminescence signal of the GaAs/GaInP QWs is shown to have a higher intensity (by a factor of 50–100) and, at the same time, a larger width (by a factor of ~2.5) in comparison with the GaAs/AlGaAs QWs. We analyze different approaches to controlling emission spectra of these QWs.

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photoluminescence, quantum wells, emission spectra

Sobre autores

M. Ladugin

Sigm Plus Co.

Autor responsável pela correspondência
Email: M.Ladugin@siplus.ru
Rússia, ul. Vvedenskogo 3, Moscow, 117342