A Model for Crystal Growth of Solid Solutions in the InAs–GaAs System by a Modified Floating-Zone Technique
- Autores: Agamaliyev Z.A.1, Ramazanov M.A.1, Azhdarov G.K.2
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Afiliações:
- Baku State University
- Institute of Physics, Academy of Sciences of Azerbaijan
- Edição: Volume 55, Nº 3 (2019)
- Páginas: 205-209
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158651
- DOI: https://doi.org/10.1134/S0020168519030014
- ID: 158651
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Resumo
In this paper, we present a principle and theoretical basis of the growth of single crystals of semiconductor solid solutions by a new modified floating zone technique using seeds consisting of their constituent components. Using a completely homogeneous melt approximation, we find component concentration distributions along the length of InAs–GaAs crystals grown at different process parameters, such as the molten zone length, seed materials, and materials of macrohomogeneous solid solution rods. Analysis of the present results makes it possible to optimize conditions for the growth of single crystals with a preset uniform or graded composition throughout the continuous series of InAs–GaAs solid solutions. We demonstrate the potential of the modified floating zone technique for growing single crystals of semiconductor solid solutions.
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Sobre autores
Z. Agamaliyev
Baku State University
Email: zangi@physics.ab.az
Azerbaijão, ul. Khalilova 23, Baku, AZ 1143
M. Ramazanov
Baku State University
Email: zangi@physics.ab.az
Azerbaijão, ul. Khalilova 23, Baku, AZ 1143
G. Azhdarov
Institute of Physics, Academy of Sciences of Azerbaijan
Autor responsável pela correspondência
Email: zangi@physics.ab.az
Azerbaijão, pr. Javida 113, Baku, AZ 1143
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