A Model for Crystal Growth of Solid Solutions in the InAs–GaAs System by a Modified Floating-Zone Technique

Аннотация

In this paper, we present a principle and theoretical basis of the growth of single crystals of semiconductor solid solutions by a new modified floating zone technique using seeds consisting of their constituent components. Using a completely homogeneous melt approximation, we find component concentration distributions along the length of InAs–GaAs crystals grown at different process parameters, such as the molten zone length, seed materials, and materials of macrohomogeneous solid solution rods. Analysis of the present results makes it possible to optimize conditions for the growth of single crystals with a preset uniform or graded composition throughout the continuous series of InAs–GaAs solid solutions. We demonstrate the potential of the modified floating zone technique for growing single crystals of semiconductor solid solutions.