Electronic Structure and Ferromagnetic Transition Temperature of Ga 1   – x  Mn  x  As in the Nonempirical Local Exchange Method

Electronic Structure and Ferromagnetic Transition Temperature of Ga₁_{– x}Mn_xAs in the Nonempirical Local Exchange Method

Autores: Yarzhemsky V.G.¹, Murashov S.V.¹, Izotov A.D.¹
Afiliações:
1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Edição: Volume 55, Nº 1 (2019)
Páginas: 1-8
Seção: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158619
DOI: https://doi.org/10.1134/S0020168519010187
ID: 158619

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Somente assinantes

spintronic materials, diluted magnetic semiconductor, GaAs, Mn, density functional method, density of states, band structure

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Autor responsável pela correspondência
Email: vgyar@igic.ras.ru
Rússia, Leninskii pr. 31, Moscow, 119991

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: vgyar@igic.ras.ru
Rússia, Leninskii pr. 31, Moscow, 119991

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: vgyar@igic.ras.ru
Rússia, Leninskii pr. 31, Moscow, 119991

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