Electronic Structure and Ferromagnetic Transition Temperature of Ga 1   – x  Mn  x  As in the Nonempirical Local Exchange Method

Electronic Structure and Ferromagnetic Transition Temperature of Ga₁_{– x}Mn_xAs in the Nonempirical Local Exchange Method

Авторлар: Yarzhemsky V.G.¹, Murashov S.V.¹, Izotov A.D.¹
Мекемелер:
1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Шығарылым: Том 55, № 1 (2019)
Беттер: 1-8
Бөлім: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158619
DOI: https://doi.org/10.1134/S0020168519010187
ID: 158619

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Тек жазылушылар үшін

spintronic materials, diluted magnetic semiconductor, GaAs, Mn, density functional method, density of states, band structure

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: vgyar@igic.ras.ru
Ресей, Leninskii pr. 31, Moscow, 119991

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: vgyar@igic.ras.ru
Ресей, Leninskii pr. 31, Moscow, 119991

Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: vgyar@igic.ras.ru
Ресей, Leninskii pr. 31, Moscow, 119991

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