Buried crescent InP/InGaAsP/InP heterostructure on p-InP for linear edge-emitting diodes

Аннотация

A process has been developed for the liquid phase epitaxy of mesa stripe buried crescent InP/InGaAsP/InP heterostructures with a p–n–p–n/ZnSe leakage current-blocking structure. The salient feature of the process is a discontinuous mesa stripe which alternates with the structure of blocking layers. This technology allows one to fabricate linear edge-emitting diodes, mounted with the mesa stripe down or up, with an emission wavelength λ = 1.3–1.5 μm, high reproducibility, the possibility of coupling more than 50 μW of optical power into single-mode fiber at a current of 100 mA, an emission bandwidth of about 60 nm, and essentially negligible Fabry–Perot modulation.