Growth of Y3Fe5O12 films on Si with AlOx and SiO2 buffer layers by ion beam sputtering
- Authors: Stognij A.I.1, Novitskii N.N.1, Golikova O.L.2, Bespalov A.V.2, Gieniusz R.3, Maziewski A.3, Stupakiewicz A.3, Smirnova M.N.4, Ketsko V.A.4
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Affiliations:
- Scientific–Practical Materials Research Centre
- Moscow State Institute of Radio Engineering, Electronics, and Automation (Technological University)
- Laboratory of Magnetism, Faculty of Physics
- Kurnakov Institute of General and Inorganic Chemistry
- Issue: Vol 53, No 10 (2017)
- Pages: 1069-1074
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158307
- DOI: https://doi.org/10.1134/S0020168517100156
- ID: 158307
Cite item
Abstract
Amorphous yttrium iron garnet films ranging in thickness from 100 to 600 nm have been produced on single-crystal silicon substrates by sputtering a polycrystalline target with the composition Y3Fe5O12 (yttrium iron garnet) by a mixture of argon and oxygen ions. Before film growth, AlOx or SiO2 buffer layers up to 0.8 μm in thickness were grown on the Si surface. The heterostructures were crystallized by annealing in air at a temperature of 950°C for 30 min. The properties of the films were studied by magneto-optical techniques, using Kerr effect and ferromagnetic resonance measurements. The Gilbert damping parameter reached 2.8 × 10–3 and the effective planar magnetic anisotropy field was independent of the nature of the buffer layer. This suggests that the thin-film heterostructures obtained in this study are potentially attractive for use in spin-wave semiconductor devices.
About the authors
A. I. Stognij
Scientific–Practical Materials Research Centre
Author for correspondence.
Email: stognij@ifttp.bas-net.by
Belarus, vul. Brovki 19, Minsk, 220072
N. N. Novitskii
Scientific–Practical Materials Research Centre
Email: stognij@ifttp.bas-net.by
Belarus, vul. Brovki 19, Minsk, 220072
O. L. Golikova
Moscow State Institute of Radio Engineering, Electronics, and Automation (Technological University)
Email: stognij@ifttp.bas-net.by
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
A. V. Bespalov
Moscow State Institute of Radio Engineering, Electronics, and Automation (Technological University)
Email: stognij@ifttp.bas-net.by
Russian Federation, pr. Vernadskogo 78, Moscow, 119454
R. Gieniusz
Laboratory of Magnetism, Faculty of Physics
Email: stognij@ifttp.bas-net.by
Poland, Giolkowskiego 1L, Bialystok, 15-240
A. Maziewski
Laboratory of Magnetism, Faculty of Physics
Email: stognij@ifttp.bas-net.by
Poland, Giolkowskiego 1L, Bialystok, 15-240
A. Stupakiewicz
Laboratory of Magnetism, Faculty of Physics
Email: stognij@ifttp.bas-net.by
Poland, Giolkowskiego 1L, Bialystok, 15-240
M. N. Smirnova
Kurnakov Institute of General and Inorganic Chemistry
Email: stognij@ifttp.bas-net.by
Russian Federation, Leninskii pr. 31, Moscow, 119991
V. A. Ketsko
Kurnakov Institute of General and Inorganic Chemistry
Email: stognij@ifttp.bas-net.by
Russian Federation, Leninskii pr. 31, Moscow, 119991
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