IR sensitization of PbSnSe films by heat treatment in air


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

This paper examines the IR sensitization of Pb0.975Sn0.025Se films by heat treatment in air. The films were annealed in the temperature range from 403 to 723 K. Heat treatment was accompanied by the recrystallization of agglomerates in the films. The photosensitivity of the films was shown to depend on heat treatment temperature. The films sensitized in the temperature range 653–700 K offer the highest photosensitivity (80–140 μV). The observed increase in the dark resistance and voltage sensitivity of the films is probably due to the formation of oxide phases on the surface of their microcrystallites.

作者简介

N. Tretyakova

Yeltsin Federal University

编辑信件的主要联系方式.
Email: n-tretyakova@mail.ru
俄罗斯联邦, ul. Mira 28, Yekaterinburg, 620002

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2017