IR sensitization of PbSnSe films by heat treatment in air

Abstract

This paper examines the IR sensitization of Pb_0.975Sn_0.025Se films by heat treatment in air. The films were annealed in the temperature range from 403 to 723 K. Heat treatment was accompanied by the recrystallization of agglomerates in the films. The photosensitivity of the films was shown to depend on heat treatment temperature. The films sensitized in the temperature range 653–700 K offer the highest photosensitivity (80–140 μV). The observed increase in the dark resistance and voltage sensitivity of the films is probably due to the formation of oxide phases on the surface of their microcrystallites.