Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions


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This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C4H6O6 in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions.

作者简介

I. Levchenko

Lashkaryov Institute of Semiconductor Physics

Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028

I. Stratiychuk

Lashkaryov Institute of Semiconductor Physics

Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028

V. Tomashyk

Lashkaryov Institute of Semiconductor Physics

编辑信件的主要联系方式.
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028

G. Malanych

Lashkaryov Institute of Semiconductor Physics

Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028

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