Chemical interaction of InAs, InSb, GaAs, and GaSb with (NH4)2Cr2O7–HBr–C4H6O6 etching solutions

Аннотация

This paper presents results on the kinetics and mechanism of the physicochemical interaction of InAs, InSb, GaAs, and GaSb semiconductor surfaces with (NH₄)₂Cr₂O₇–HBr–C₄H₆O₆ etching solutions under reproducible hydrodynamic conditions in the case of laminar etchant flow over a substrate. We have identified regions of polishing and nonpolishing solutions and evaluated the apparent activation energy of the process. The surface morphology of the crystals has been examined by microstructural analysis after chemical etching. The results demonstrate that the presence of C₄H₆O₆ in etchants helps to reduce the overall reaction rate and extend the region of polishing solutions.