Email this article X-ray dosimetric characteristics of AgGaS2 single crystals grown by chemical vapor transport
- Authors: Asadov S.M.1, Mustafaeva S.N.2, Guseinov D.T.2
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Affiliations:
- Nagiyev Institute of Catalysis and Inorganic Chemistry
- Institute of Physics
- Issue: Vol 53, No 5 (2017)
- Pages: 457-461
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158213
- DOI: https://doi.org/10.1134/S0020168517050028
- ID: 158213
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Abstract
Using chemical vapor transport, we have grown AgGaS2 single crystals possessing large room-temperature X-ray induced conductivity and X-ray sensitivity coefficients, which allows the single crystals to be recommended for use as key elements of various uncooled and very fast X-ray detecting devices and systems.
About the authors
S. M. Asadov
Nagiyev Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
Azerbaijan, pr. Javida 113, Baku, AZ1143
S. N. Mustafaeva
Institute of Physics
Author for correspondence.
Email: solmust@gmail.com
Azerbaijan, pr. Javida 113, Baku, AZ1143
D. T. Guseinov
Institute of Physics
Email: solmust@gmail.com
Azerbaijan, pr. Javida 113, Baku, AZ1143
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