Enviar artigo por via de e-mail X-ray dosimetric characteristics of AgGaS2 single crystals grown by chemical vapor transport
- Autores: Asadov S.M.1, Mustafaeva S.N.2, Guseinov D.T.2
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Afiliações:
- Nagiyev Institute of Catalysis and Inorganic Chemistry
- Institute of Physics
- Edição: Volume 53, Nº 5 (2017)
- Páginas: 457-461
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158213
- DOI: https://doi.org/10.1134/S0020168517050028
- ID: 158213
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Resumo
Using chemical vapor transport, we have grown AgGaS2 single crystals possessing large room-temperature X-ray induced conductivity and X-ray sensitivity coefficients, which allows the single crystals to be recommended for use as key elements of various uncooled and very fast X-ray detecting devices and systems.
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Sobre autores
S. Asadov
Nagiyev Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
Azerbaijão, pr. Javida 113, Baku, AZ1143
S. Mustafaeva
Institute of Physics
Autor responsável pela correspondência
Email: solmust@gmail.com
Azerbaijão, pr. Javida 113, Baku, AZ1143
D. Guseinov
Institute of Physics
Email: solmust@gmail.com
Azerbaijão, pr. Javida 113, Baku, AZ1143
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