Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials
- 作者: Sherchenkov A.A.1, Kozyukhin S.A.2,3, Babich A.V.1, Lazarenko P.I.1, Vargunin A.I.1
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隶属关系:
- MIET National Research University of Electronic Technology
- Kurnakov Institute of General and Inorganic Chemistry
- Tomsk State University
- 期: 卷 53, 编号 1 (2017)
- 页面: 45-49
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158150
- DOI: https://doi.org/10.1134/S0020168517010150
- ID: 158150
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详细
We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for Ge2Sb2Te5-based thin films.
作者简介
A. Sherchenkov
MIET National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498
S. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry; Tomsk State University
编辑信件的主要联系方式.
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991; pr. Lenina 36, Tomsk, 634050
A. Babich
MIET National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498
P. Lazarenko
MIET National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498
A. Vargunin
MIET National Research University of Electronic Technology
Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498
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