Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials


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We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for Ge2Sb2Te5-based thin films.

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A. Sherchenkov

MIET National Research University of Electronic Technology

Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498

S. Kozyukhin

Kurnakov Institute of General and Inorganic Chemistry; Tomsk State University

编辑信件的主要联系方式.
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Leninskii pr. 31, Moscow, 119991; pr. Lenina 36, Tomsk, 634050

A. Babich

MIET National Research University of Electronic Technology

Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498

P. Lazarenko

MIET National Research University of Electronic Technology

Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498

A. Vargunin

MIET National Research University of Electronic Technology

Email: sergkoz@igic.ras.ru
俄罗斯联邦, pl. Shokina 1, Zelenograd, Moscow, 124498

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