Integral isoconversional method for evaluating crystallization parameters of thin films of Ge 2 Sb 2 Te 5  phase change memory materials

A. A. Sherchenkov; S. A. Kozyukhin; A. V. Babich; P. I. Lazarenko; A. I. Vargunin

doi:10.1134/S0020168517010150

Integral isoconversional method for evaluating crystallization parameters of thin films of Ge₂Sb₂Te₅ phase change memory materials

Autores: Sherchenkov A.A.¹, Kozyukhin S.A.²^,3, Babich A.V.¹, Lazarenko P.I.¹, Vargunin A.I.¹
Afiliações:
1. MIET National Research University of Electronic Technology
2. Kurnakov Institute of General and Inorganic Chemistry
3. Tomsk State University
Edição: Volume 53, Nº 1 (2017)
Páginas: 45-49
Seção: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158150
DOI: https://doi.org/10.1134/S0020168517010150
ID: 158150

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for Ge₂Sb₂Te₅-based thin films.