Position sensitivity characteristics of  n -CdSe epitaxial layers grown on mica crystals in a quasi-closed system

E. A. Senokosov; V. I. Chukita; R. A. Khamidullin; V. N. Cheban; I. N. Odin; M. V. Chukichev

doi:10.1134/S002016851608015X

Position sensitivity characteristics of n-CdSe epitaxial layers grown on mica crystals in a quasi-closed system

作者: Senokosov E.A.¹, Chukita V.I.¹, Khamidullin R.A.¹, Cheban V.N.¹, Odin I.N.², Chukichev M.V.²
隶属关系:
1. Shevchenko State University
2. Faculty of Chemistry
期: 卷 52, 编号 8 (2016)
页面: 762-764
栏目: Article
URL: https://journals.rcsi.science/0020-1685/article/view/157820
DOI: https://doi.org/10.1134/S002016851608015X
ID: 157820

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Photosensitive epitaxial n-CdSe layers with high structural perfection have been grown on mica (muscovite) crystals in a quasi-closed system. We have studied polar diagrams of sensitivity for the epitaxial n-CdSe layers on mica as four-contact position-sensitive semiconductor photodetectors. Position sensitivity characteristics of the epitaxial n-CdSe layers on mica have been determined.