Enviar artigo por via de e-mail Position sensitivity characteristics of n-CdSe epitaxial layers grown on mica crystals in a quasi-closed system
- Autores: Senokosov E.A.1, Chukita V.I.1, Khamidullin R.A.1, Cheban V.N.1, Odin I.N.2, Chukichev M.V.2
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Afiliações:
- Shevchenko State University
- Faculty of Chemistry
- Edição: Volume 52, Nº 8 (2016)
- Páginas: 762-764
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/157820
- DOI: https://doi.org/10.1134/S002016851608015X
- ID: 157820
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Resumo
Photosensitive epitaxial n-CdSe layers with high structural perfection have been grown on mica (muscovite) crystals in a quasi-closed system. We have studied polar diagrams of sensitivity for the epitaxial n-CdSe layers on mica as four-contact position-sensitive semiconductor photodetectors. Position sensitivity characteristics of the epitaxial n-CdSe layers on mica have been determined.
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Sobre autores
E. Senokosov
Shevchenko State University
Email: i.n.odin@mail.ru
Moldova, ul. 25 Oktyabrya 107, Tiraspol, MD-3300
V. Chukita
Shevchenko State University
Email: i.n.odin@mail.ru
Moldova, ul. 25 Oktyabrya 107, Tiraspol, MD-3300
R. Khamidullin
Shevchenko State University
Email: i.n.odin@mail.ru
Moldova, ul. 25 Oktyabrya 107, Tiraspol, MD-3300
V. Cheban
Shevchenko State University
Email: i.n.odin@mail.ru
Moldova, ul. 25 Oktyabrya 107, Tiraspol, MD-3300
I. Odin
Faculty of Chemistry
Autor responsável pela correspondência
Email: i.n.odin@mail.ru
Rússia, Moscow, 119991
M. Chukichev
Faculty of Chemistry
Email: i.n.odin@mail.ru
Rússia, Moscow, 119991
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