Email this article Emittance Properties of Siliconized Silicon Carbide in the Temperature Range of 1400–2200 K
- Authors: Kostanovskiy A.V.1, Zeodinov M.G.1, Kostanovskaya M.E.1, Pronkin A.A.1
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Affiliations:
- Joint Institute for High Temperatures, Russian Academy of Sciences
- Issue: Vol 57, No 2 (2019)
- Pages: 272-274
- Section: Short Communications
- URL: https://journals.rcsi.science/0018-151X/article/view/157969
- DOI: https://doi.org/10.1134/S0018151X19020093
- ID: 157969
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About the authors
A. V. Kostanovskiy
Joint Institute for High Temperatures, Russian Academy of Sciences
Author for correspondence.
Email: kostanovskiy@gmail.com
Russian Federation, Moscow, 125412
M. G. Zeodinov
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
Russian Federation, Moscow, 125412
M. E. Kostanovskaya
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
Russian Federation, Moscow, 125412
A. A. Pronkin
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
Russian Federation, Moscow, 125412
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