Enviar artigo por via de e-mail Emittance Properties of Siliconized Silicon Carbide in the Temperature Range of 1400–2200 K
- Autores: Kostanovskiy A.V.1, Zeodinov M.G.1, Kostanovskaya M.E.1, Pronkin A.A.1
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Afiliações:
- Joint Institute for High Temperatures, Russian Academy of Sciences
- Edição: Volume 57, Nº 2 (2019)
- Páginas: 272-274
- Seção: Short Communications
- URL: https://journals.rcsi.science/0018-151X/article/view/157969
- DOI: https://doi.org/10.1134/S0018151X19020093
- ID: 157969
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A. Kostanovskiy
Joint Institute for High Temperatures, Russian Academy of Sciences
Autor responsável pela correspondência
Email: kostanovskiy@gmail.com
Rússia, Moscow, 125412
M. Zeodinov
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
Rússia, Moscow, 125412
M. Kostanovskaya
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
Rússia, Moscow, 125412
A. Pronkin
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
Rússia, Moscow, 125412
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