Special aspects of the photoluminescence of thermally annealed porous silicon layers
- Autores: Abramova E.1, Khort A.1, Yakovenko A.1, Sorokin T.1, Shvets V.1
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Afiliações:
- Institute of Fine Chemical Technologies
- Edição: Volume 474, Nº 1 (2017)
- Páginas: 113-115
- Seção: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153984
- DOI: https://doi.org/10.1134/S0012500817050044
- ID: 153984
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Resumo
The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.
Sobre autores
E. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
A. Khort
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
A. Yakovenko
Institute of Fine Chemical Technologies
Autor responsável pela correspondência
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
T. Sorokin
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
V. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571