Special aspects of the photoluminescence of thermally annealed porous silicon layers
- Авторлар: Abramova E.1, Khort A.1, Yakovenko A.1, Sorokin T.1, Shvets V.1
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Мекемелер:
- Institute of Fine Chemical Technologies
- Шығарылым: Том 474, № 1 (2017)
- Беттер: 113-115
- Бөлім: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153984
- DOI: https://doi.org/10.1134/S0012500817050044
- ID: 153984
Дәйексөз келтіру
Аннотация
The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.
Авторлар туралы
E. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Ресей, Moscow, 119571
A. Khort
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Ресей, Moscow, 119571
A. Yakovenko
Institute of Fine Chemical Technologies
Хат алмасуға жауапты Автор.
Email: anavenko@yandex.ru
Ресей, Moscow, 119571
T. Sorokin
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Ресей, Moscow, 119571
V. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Ресей, Moscow, 119571