Special aspects of the photoluminescence of thermally annealed porous silicon layers


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.

作者简介

E. Abramova

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571

A. Khort

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571

A. Yakovenko

Institute of Fine Chemical Technologies

编辑信件的主要联系方式.
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571

T. Sorokin

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571

V. Shvets

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2017