Special aspects of the photoluminescence of thermally annealed porous silicon layers


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Abstract

The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.

About the authors

E. N. Abramova

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571

A. M. Khort

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571

A. G. Yakovenko

Institute of Fine Chemical Technologies

Author for correspondence.
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571

T. A. Sorokin

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571

V. I. Shvets

Institute of Fine Chemical Technologies

Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571


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