Special aspects of the photoluminescence of thermally annealed porous silicon layers
- Authors: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Sorokin T.A.1, Shvets V.I.1
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Affiliations:
- Institute of Fine Chemical Technologies
- Issue: Vol 474, No 1 (2017)
- Pages: 113-115
- Section: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153984
- DOI: https://doi.org/10.1134/S0012500817050044
- ID: 153984
Cite item
Abstract
The effect of thermal annealing of porous silicon layers in various media with subsequent exposure to air on the photoluminescence spectra of the layers was described.
About the authors
E. N. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
A. M. Khort
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
A. G. Yakovenko
Institute of Fine Chemical Technologies
Author for correspondence.
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
T. A. Sorokin
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
V. I. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571