Email this article Pore nucleation and growth in n-type Si during its electrochemical etching
- Authors: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Prokhorov D.I.1, Shvets V.I.1
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Affiliations:
- Institute of Fine Chemical Technologies
- Issue: Vol 473, No 2 (2017)
- Pages: 67-69
- Section: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153935
- DOI: https://doi.org/10.1134/S0012500817040012
- ID: 153935
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Abstract
A mechanism is suggested for pore formation in n-type Si through the stage of nucleation in the most probable places.
About the authors
E. N. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
A. M. Khort
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
A. G. Yakovenko
Institute of Fine Chemical Technologies
Author for correspondence.
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
D. I. Prokhorov
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
V. I. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Russian Federation, Moscow, 119571
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