Enviar artigo por via de e-mail Pore nucleation and growth in n-type Si during its electrochemical etching
- Autores: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Prokhorov D.I.1, Shvets V.I.1
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Afiliações:
- Institute of Fine Chemical Technologies
- Edição: Volume 473, Nº 2 (2017)
- Páginas: 67-69
- Seção: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153935
- DOI: https://doi.org/10.1134/S0012500817040012
- ID: 153935
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Resumo
A mechanism is suggested for pore formation in n-type Si through the stage of nucleation in the most probable places.
Sobre autores
E. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
A. Khort
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
A. Yakovenko
Institute of Fine Chemical Technologies
Autor responsável pela correspondência
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
D. Prokhorov
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
V. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
Rússia, Moscow, 119571
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