Enviar artigo por via de e-mail Modeling of radiation sensitivity of hydrogen sensors based on MISFET
- Autores: Podlepetsky B.I.1
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Afiliações:
- National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
- Edição: Volume 77, Nº 7 (2016)
- Páginas: 1301-1315
- Seção: Sensors and Systems
- URL: https://journals.rcsi.science/0005-1179/article/view/150398
- DOI: https://doi.org/10.1134/S0005117916070171
- ID: 150398
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Resumo
The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.
Sobre autores
B. Podlepetsky
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
Autor responsável pela correspondência
Email: bipod45@gmail.com
Rússia, Moscow
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