Modeling of radiation sensitivity of hydrogen sensors based on MISFET
- 作者: Podlepetsky B.I.1
- 
							隶属关系: 
							- National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
 
- 期: 卷 77, 编号 7 (2016)
- 页面: 1301-1315
- 栏目: Sensors and Systems
- URL: https://journals.rcsi.science/0005-1179/article/view/150398
- DOI: https://doi.org/10.1134/S0005117916070171
- ID: 150398
如何引用文章
详细
The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.
作者简介
B. Podlepetsky
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
							编辑信件的主要联系方式.
							Email: bipod45@gmail.com
				                					                																			                												                	俄罗斯联邦, 							Moscow						
补充文件
 
				
			 
						 
						 
					 
						 
						 
				 
  
  
  
  
  电邮这篇文章
			电邮这篇文章  开放存取
		                                开放存取 ##reader.subscriptionAccessGranted##
						##reader.subscriptionAccessGranted## 订阅存取
		                                		                                        订阅存取
		                                					