Modeling of radiation sensitivity of hydrogen sensors based on MISFET
- Authors: Podlepetsky B.I.1
- 
							Affiliations: 
							- National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
 
- Issue: Vol 77, No 7 (2016)
- Pages: 1301-1315
- Section: Sensors and Systems
- URL: https://journals.rcsi.science/0005-1179/article/view/150398
- DOI: https://doi.org/10.1134/S0005117916070171
- ID: 150398
Cite item
Abstract
The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.
About the authors
B. I. Podlepetsky
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
							Author for correspondence.
							Email: bipod45@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow						
Supplementary files
 
				
			 
					 
						 
						 
						 
						 
				 
  
  
  
  
  Email this article
			Email this article  Open Access
		                                Open Access Access granted
						Access granted Subscription Access
		                                		                                        Subscription Access
		                                					