电邮这篇文章 Modeling of radiation sensitivity of hydrogen sensors based on MISFET
- 作者: Podlepetsky B.I.1
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隶属关系:
- National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
- 期: 卷 77, 编号 7 (2016)
- 页面: 1301-1315
- 栏目: Sensors and Systems
- URL: https://journals.rcsi.science/0005-1179/article/view/150398
- DOI: https://doi.org/10.1134/S0005117916070171
- ID: 150398
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详细
The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.
作者简介
B. Podlepetsky
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
编辑信件的主要联系方式.
Email: bipod45@gmail.com
俄罗斯联邦, Moscow
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