电邮这篇文章 Photon-Assisted Electron Transmission through a Quantum Point Contact
- 作者: Tkachenko O.A.1, Baksheev D.G.2,3, Tkachenko V.A.1,2,4, Kvon Z.D.1,2, Yaroshevich A.S.1, Rodyakina E.E.1,2, Latyshev A.V.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Yandex company
- Novosibirsk State Technical University
- 期: 卷 55, 编号 5 (2019)
- 页面: 480-487
- 栏目: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212864
- DOI: https://doi.org/10.3103/S8756699019050108
- ID: 212864
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详细
The theory of coherent photon-assisted electron transmission through a one-dimensional smooth barrier is successfully used to model the results of measuring the terahertz photoconductivity of a tunneling point contact in a two-dimensional electron gas. For this barrier in a deeper tunneling mode, photon steps in the curve of the transmission coefficient versus initial electron energy were found. Their position is determined by the terahertz photon energy.
作者简介
O. Tkachenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: vtkach@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
D. Baksheev
Novosibirsk State University; Yandex company
Email: vtkach@isp.nsc.ru
俄罗斯联邦, ul. Pirogova 2, Novosibirsk, 630090; ul. L. Tolstogo 16, Moscow, 119021
V. Tkachenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: vtkach@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090; pr. Karla Marksa 20, Novosibirsk, 630073
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: vtkach@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Yaroshevich
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: vtkach@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
E. Rodyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: vtkach@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: vtkach@isp.nsc.ru
俄罗斯联邦, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
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